MWT-0206S-11P2/0206z-11p2 MWT-0206S-11P2/0206z-11p2 2.0-6.0 ghz balanced amplifier module 2.0-6.0 ghz balanced amplifier module email: info@mwtinc.com www.mwtinc.com 4268 solar way fremont california 94538 phone: (510) 651-6700 fax: (510) 651-2208 4268 solar way fremont california 94538 phone: (510) 651-6700 fax: (510) 651-2208 frequency (ghz) frequency (ghz) typical small signal gain (db) typical input/output return loss (db) 0 5 10 15 20 2 3 4 5 6 2 3 4 5 6 30.0 dbm p-1db typical specifications at 25 c 6.0 db small signal gain +41 dbm ip3 850 ma @ +8v uses two mwt-11 gaas fet devices electrical specifications (ta=25 c) symbol parameters units min typ max freq frequency range ghz 2.0 6.0 ssg small signal gain db 5.0 6.0 g/ f ssg flatness +/-db 0 .4 0.6 g/ t ssg variation over temperature db/ c -.012 p-1db output power at 1db compression dbm 29.5 30.0 psat output power at 6 db compression dbm 31.0 p/ t p-1db variation over temperature db/ c -.008 ip3 third order intercept point dbm 41.0 2nd har 2nd harmonic at pout=30.0 dbm dbc -21.0 2nd har 2nd harmonic at pout=31.0 dbm dbc -16.0 nf noise figure db 7.0 vswr in input vswr ----- 1.7:1 2.0:1 vswr out output vswr ----- 1.7:1 2.0:1 iso reverse isolation db -1 8.0 vdd power supply voltage +v 7.9 8.0 8.1 idd small signal module current ma 850.0 950.0 rth thermal resistance including fet* c/w 41.0 s 11 s 22 7 6 5 * when calculating tch, use fet vds = 6.0 volts and fet ds = 440ma 7.0 db noise figure 8 all rights reserved. microwave technology, inc. all specifications subject to change without notice.
MWT-0206S-11P2/0206z-11p2 MWT-0206S-11P2/0206z-11p2 2.0-6.0 ghz balanced amplifier module 2.0-6.0 ghz balanced amplifier module notes: construction email: info@mwtinc.com www.mwtinc.com 4268 solar way fremont california 94538 phone: (510) 651-6700 fax: (510) 651-2208 4268 solar way fremont california 94538 phone: (510) 651-6700 fax: (510) 651-2208 construction: notes: .055 max. w/caps & bond wires .041 .025 .490 .490 .600 .600 .110 .110 .095 .095 dc .08 .08 .505 .505 .08 .08 rf in rf out rf out z s o o o o .087 .087 .113 .113 .183 .183 .209 .209 .296 .296 the 15 mil alumina substrates and 10 mil copper fet ridge are brazed onto the 25 mil carrier using auge preform. the gaas fets are attached to the cu ridge using ausn preform. all capacitors are attached using ausn preforms. the flanges are designed to accommodate 0-80 unf-2a socket or fillister head screws on .400 center-to-center hole spacing. the modules are mechanically and electrically designed to be cascaded. configurations 1. dimension in inches 2. tolerance: xxx= +/- .005 xx= +/- .01 1. custom module specifications and/or custom module mechanical configurations are available. 2. operating temperature range is -55 degrees celsius to +105 degrees celsius. 3. all modules are serialized and shipped with data measured at 25 degrees celsius. data includes swept small signal gain, swept input and output return loss. noise figure and p-1db are measured in 1 ghz increments. special module testing is available. 4. test fixtures are available. 5. microwave technology reserves the right to ship modules with performance above the typical specifications. rf in dc dc dc all rights reserved. microwave technology, inc. all specifications subject to change without notice.
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